2N7002DW 2N 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
115mA/0.115A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
2.53?@ VGS = 10V,ID = 0.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1~2V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
N-Channel Enhancement Mode Field Effect Transistor Features ? Dual N-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Lead Free/RoHS Compliant |
| 描述与应用 |
N沟道增强型场效应晶体管 特点 ?双N沟道MOSFET ?低导通电阻 ?低栅极阈值电压 ?低输入电容 ?开关速度快 ?低输入/输出漏 ?超小型表面贴装封装 ?无铅/ RoHS标准 |
| 技术文档PDF下载 |
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