2N7002DW 702 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
115mA/0.115A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
7.5?@ VGS = 4.5V,ID = 75mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1~2.5V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
60V N-Channel Enhancement Mode MOSFET FEATURES ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. ? In compliance with EU RoHS 2002/95/EC directives |
| 描述与应用 |
60V N沟道增强型MOSFET 特点 ?先进沟道工艺技术 ?高密度电池设计超低导通电阻 ?专为电池供电系统，固态继电器驱动：继电器，显示器，灯，电磁阀，记忆等 ?符合欧盟RoHS指令2002/95/EC指令 |
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