MJD2955 R2N 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-70V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?60V |
| 集电极连续输出电流IC
Collector Current(IC) |
?10A |
| 截止频率fT
Transtion Frequency(fT) |
2MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
20~100 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-1.1V |
| 耗散功率Pc
PoWer Dissipation |
1.75W |
| Description & Applications |
PNP epitaxial planar transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves ? Lead Formed Version Available in 16 mm Tape and Reel ? Electrically Similar to MJE2955 and MJE3055 ? DC Current Gain Specified to 10 Amperes ? High Current Gain–Bandwidth Product |
| 描述与应用 |
PNP外延平面晶体管 DPAK表面贴装应用 专为通用放大器和低速开关应用。 ?铅形成表面贴装塑料套中的应用 ?直引线型塑料套 ?铅形成版本在16毫米编带和卷轴 ?电类似MJE2955和MJE3055 ?指定至10安培的直流电流增益 ?高电流增益带宽积 |
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