MJD210-TF MJD210 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?25V |
| 集电极连续输出电流IC
Collector Current(IC) |
-5A |
| 截止频率fT
Transtion Frequency(fT) |
65MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
45~180 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-750mV/-0.75V |
| 耗散功率Pc
PoWer Dissipation |
1.4W |
| Description & Applications |
PNP epitaxial planar transistor D-PAK for Surface Mount Applications ? High DC Current Gain Feature ? Low Collector Emitter Saturation Voltage ? Lead Formed for Surface Mount Applications ? Straight Lead |
| 描述与应用 |
PNP外延平面晶体管 D-PAK表面贴装应用 ?高直流电流增益 特点 ?低集电极发射极饱和电压 ?铅形成表面贴装应用 ?直铅 |
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