MJD200T4 J200 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
25V |
| 集电极连续输出电流IC
Collector Current(IC) |
5A |
| 截止频率fT
Transtion Frequency(fT) |
65MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
10~180 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
0.3V~1.8V |
| 耗散功率Pc
Power Dissipation |
12.5W |
| Description & Applications |
Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Collector?Emitter Sustaining Voltage ? VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ? High DC Current Gain ? hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc ? High Current?Gain ? Bandwidth Product ? fT = 65 MHz (Min) @ IC = 100 mAdc ? Annular Construction for Low Leakage ? ICBO = 100 nAdc @ Rated VCB ? Epoxy Meets UL 94 V?0 @ 0.125 in ? ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V ? Pb?Free Packages are Available |
| 描述与应用 |
互补塑料 功率晶体管 NPN/ PNP硅表面DPAK 安装应用 集电极 - 发射极电压 - VCEO（SUS） ?= 25 VDC（最小）@ IC= 10 MADC ?高直流电流增益 - HFE=70（分钟）@ IC= 500 MADC =45（最小）@ IC= 2 ADC =10（最小）@ IC= 5 ADC ?铅形成表面贴装塑料套中的应用 （没有后缀） ?低集电极 - 发射极饱和电压 - VCE（星期六）= 0.3 VDC（最大）@ IC=500 MADC = 0.75 VDC（最大）@ IC= 2.0 ADC ?高电流增益 - 带宽积 - FT =65兆赫（最小）@ IC=100 MADC ?低漏电流的环形施工 - ICBO=100 NADC额定VCB ?环氧会见UL 94 V-0@0.125 ?ESD额定值：人体模型，3B？ 8000 V 机器型号，C？ 400 V ?无铅包可用 |
| 技术文档PDF下载 |
在线阅读  |
