BFR540 N29 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
120mA/0.12A |
| 截止频率fT
Transtion Frequency(fT) |
9Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
60~250 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
500mW/0.5W |
| Description & Applications |
NPN 9 GHz wideband transistor FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. |
| 描述与应用 |
NPN9 GHz的宽带晶体管 特点 ?高功率增益 ?低噪声系数 ?高转换频率 ?黄金金属确保卓越的可靠性。 说明 BFR540 NPN硅平面外延晶体管，用于在GHz范围内的宽带应用中的RF前端的应用，如模拟和数字 蜂窝电话，无绳电话（CT1，CT2，DECT等），雷达探测器，卫星电视调谐器（SATV），MATV/ CATV放大器和中继放大器在光纤系统中。 |
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