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3SK184 3RQ 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
13V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-3.5V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
15mA-21mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-3.5V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
GaAs N-Channel MES FET ,UHF Low-noise Amplifier ,Low NF, For low voltage operation ,MINI Type package suitable for small equipment, tape and magazine types for automatic insertion are available . |
| 描述与应用 |
砷化镓N沟道MES场效应管, 超高频低噪声放大器, 低NF ,用于低电压操作, 迷你型包装适合小型设备，带盒类型可用于自动插入. |
| 技术文档PDF下载 |
在线阅读  |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| 3SK181 |
EJ5 |
SANYO |
05+ |
SOT-143/CP4 |
1300 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK181 |
EJ5 |
SANYO |
05+ |
SOT-143/CP4 |
3000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK182 |
EI |
HITACHI |
05+ |
SOT-143/MPAK-4 |
910 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK184 |
3RQ |
Panasonic |
05+ |
SOT-143 |
0 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
| 3SK184-r |
3RR |
Panasonic |
05+ |
SOT-143 |
0 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
| 3SK186F1 |
FI |
HITACHI |
05+ |
SOT-143/MPAK-4 |
2600 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK186FI |
FI |
HITACHI |
05+ |
SOT-143/MPAK-4 |
18000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
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