SSM6K411TU KNH 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
最大漏极电流Id
Drain Current |
10A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
12m?@ VGS = 4.5V, ID = 7A |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.5~1.2V |
耗散功率Pd
Power Dissipation |
1W |
Description & Applications |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications ? 2.5-V drive ? Low ON-resistance:RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V) |
描述与应用 |
东芝场效应晶体管的硅N沟道MOS类型 ○电源管理开关应用 ○高速开关应用 ?2.5-V驱动器 ?低导通电阻RDS(ON)=23.8MΩ(最大)(@ VGS=2.5 V) RDS(ON)= 14.3MΩ(最大)(@ VGS=3.5 V) RDS(ON)= 12MΩ(最大)(@ VGS=4.5 V) |
技术文档PDF下载 |
在线阅读 |