SSM6K403TU KND 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
最大漏极电流Id
Drain Current |
4.2A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
28m?@ VGS = 4.0V, ID = 3A |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.35~1.0V |
耗散功率Pd
Power Dissipation |
500mW/0.5W |
Description & Applications |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS ○ Power Management Switch Applications ○ High-Speed Switching Applications ? 1.5V drive ? Low ON-resistance:Ron = 66mΩ (max) (@VGS = 1.5V) Ron = 43mΩ (max) (@VGS = 1.8V) Ron = 32mΩ (max) (@VGS = 2.5V) Ron = 28mΩ (max) (@VGS = 4.0V) |
描述与应用 |
东芝场效应晶体管的硅N沟道MOS MOS ○电源管理开关应用 ○高速开关应用 ?1.5V驱动 ?低导通电阻:RON =66mΩ(最大)(@ VGS=1.5V) RON =43MΩ(最大)(@ VGS=1.8V) RON =32MΩ(最大)(@ VGS= 2.5V) RON =28mΩ(最大值)(@ VGS=4.0V) |
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