SSM6J53FE KG 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
最大漏极电流Id
Drain Current |
-1.8A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance |
136m?@ VGS = -2.5V, ID = -1A |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
-0.3~-1.0V |
耗散功率Pd
Power Dissipation |
500mW/0.5W |
Description & Applications |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications ? 1.5 V drive ? Suitable for high-density mounting due to compact package ? Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V) |
描述与应用 |
东芝场效应晶体管硅P沟道MOS类型 ○高速开关应用 ○电源管理开关应用 ?1.5 V驱动器 ?适用于高密度安装由于紧凑的封装 ?低导通电阻:RON= 136MΩ(最大)(@ VGS=-2.5 V) RON= 204MΩ(最大)(@ VGS=-1.8 V) RON= 364MΩ(最大)(@ VGS=-1.5 V) |
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