RN1110CT L9 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
300 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.05W/50mW |
| Description & Applications |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications ?Incorporating a bias resistor into a transistrreduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ?Complementary to RN2110CT, RN2111CT |
| 描述与应用 |
开关应用 逆变电路应用 接口电路的应用 驱动器电路应用 ?将偏置电阻晶体管，减少了部件数量 减少零件数，使更加 紧凑的设备和节省组装成本。 ?互补RN2110CTRN2111CT |
| 技术文档PDF下载 |
在线阅读  |
