2SC4627GDL UD 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
15mA |
| 截止频率fT
Transtion Frequency(fT) |
650MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
40~260 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Features ?Silicon NPN epitaxial planar type ?For high-frequency amplification ?Optimum for RF amplification of FM/AM radios ?High transition frequency fT ?SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
特点 ?NPN硅外延平面型 ?对于高频放大 ?FM/ AM收音机，最适用于射频放大 ?高转换频率fT ?SS-迷你型包装，使瘦身的设备和通过自动插入磁带包装 |
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