FC118 118 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA |
| 截止频率fT
Transtion Frequency(fT) |
300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~560 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
15mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? NPN Epitaxial Planar Silicon Composite Transistor ? Low-Frequency General-Purpose Amp Applications ? Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. ? The FC118 is formed with two chips, being equivalent to the 2SC4577, placed in one package. ? Low collector to emitter saturation voltage. ? Excellent in thermal equilibrium and pair capability |
| 描述与应用 |
特点 ?NPN外延平面硅复合晶体管 ?低频通用放大器应用 ?复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 ?FC118两个芯片组成，相当于2SC4577放置在一个包装。 ?低集电极到发射极饱和电压。 ?优秀的热平衡和对能力 |
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