FC112 112 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
50 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ?NPN Epitaxial Planar Silicon Composite Transistor ?On-chip bias resistors (R1=22k?, R2=22k?) ?Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. ?The FC112 is formed with two chips, being equivalent to the 2SC3396, placed in one package. ?Excellent in thermal equilibrium and pair capability. |
| 描述与应用 |
特点 ?NPN外延平面硅复合晶体管 ?片上偏置电阻（R1=22KΩ/Ohm，R2=22KΩ/Ohm） ?复合型中包含2个晶体管 CP包装目前在使用，大大提高了安装效率。 ?FC112两个芯片组成，相当于2SC3396放置在一个包装。 ?优秀的热平衡和对能力 |
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