NZT605 605 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
140V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
110V |
| 集电极连续输出电流IC
Collector Current(IC) |
1.5A |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
500~2000 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
1V |
| 耗散功率Pc
Power Dissipation |
1W |
| Description & Applications |
? NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. ? Sourced from process 06. |
| 描述与应用 |
?达林顿晶体管NPN This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. ? Sourced from process 06. |
| 技术文档PDF下载 |
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