MMBTH11 3G 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
25V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
650Mhz |
| 直流电流增益hFE
DC Current Gain(hFE) |
60 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
350mW/0.35W |
| Description & Applications |
NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 μA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. |
| 描述与应用 |
NPN RF晶体管 该设备是专为共发射极低噪声放大器 和混频器的应用程序与集电极电流在100μA 10 mA范围300 MHz和低频漂移共基 VHF振荡器的应用程序用于驱动具有高输出电平 FET混频器。 |
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