MMBTH10 3E 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
25V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
650Mhz |
| 直流电流增益hFE
DC Current Gain(hFE) |
60 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 μA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. |
| 描述与应用 |
NPN RF晶体管 这个装置是专为使用低噪音UHF/ VHF放大器， 与集电极电流在100μA到20 mA范围内共同 发射器或共同经营的基本模式，并在低频 漂移，高输出UHF振荡器 |
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