MCH6606 FF 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
250mA/0.25A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
10.5?@ VGS =4V, ID =30mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1~2.4V |
| 耗散功率Pd
Power Dissipation |
800mW/0.8W |
| Description & Applications |
Ultrahigh-Speed Switching Applications Features ? Low ON-resistance. ? Ultrahigh-speed switching. ? 4V drive. ? Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 |
超高速开关应用 特点 ?低导通电阻。 ?超高速开关。 ?4 V驱动。 ?一个单一的包装中包含的2MOSFET的复合型 |
| 技术文档PDF下载 |
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