MCH6607 FG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-10V |
| 最大漏极电流Id
Drain Current |
-400mA/-0.4A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
20?@ VGS = -1.5V, ID = -10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.4V |
| 耗散功率Pd
Power Dissipation |
800mW/0.8W |
| Description & Applications |
Ultrahigh-Speed Switching Applications Features ? Low ON-resistance. ? Ultrahigh-speed switching. ?2.5V drive. ? Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 |
超高速开关应用 特点 ?低导通电阻。 ?超高速开关。 ?2.5V驱动。 ?一个单一的包装中包含的2MOSFET的复合型 |
| 技术文档PDF下载 |
在线阅读  |
