CPH6615 WB 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V/-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
2.5A/-1.8A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
210m?@ VGS = 1V,ID =4A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.2~2.6V |
| 耗散功率Pd
Power Dissipation |
900mW/0.9W |
| Description & Applications |
N-Channel and P-Channel Silicon MOSFETS General-Purpose Switching Device Applications Features ? The CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting. ? Excellent ON-resistance characteristic. ? Best suited for load switches. ? 4V drive. |
| 描述与应用 |
N沟道和P沟道硅MOSFET 通用开关设备应用 特点 ?CPH6614采用了N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻， 超高速开关，从而实现高密度安装。 ?优秀的导通电阻特性。 ?最适合用于负载开关。 ?4V驱动器。 |
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