CPH6619 WF 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V/-12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V/8V |
| 最大漏极电流Id
Drain Current |
400mA/-2A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
12.8?@ VGS = 1.5V,ID =10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| 耗散功率Pd
Power Dissipation |
800mW/0.8W |
| Description & Applications |
N-Channel and P-Channel Silicon MOSFETS General-Purpose Switching Device Applications Features ? Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. ? Excellent ON-resistance characteristic. ? Best suited for load switches. ? N-channel 1.5V drive, P-channel 1.8V drive. |
| 描述与应用 |
N沟道和P沟道硅MOSFET 通用开关设备应用 特点 ?复合型驱动P沟道MOSFET的低导通电阻超高开关P沟道MOSFET和一个小信号N沟道MOSFET，使高密度安装。 ?优秀的导通电阻特性。 ?最适合用于负载开关。 ?N沟道，P沟道??1.5V驱动1.8V驱动器。 |
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