PUMD6 Dt6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
|
| Q2基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
200 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ? NPN/PNP resistor-equipped transistors; ? Built-in bias resistors ? Reduces component count ? Reduces pick and place costs ? Simplifies circuit design APPLICATIONS ? Low current peripheral drivers ? Replacement of general purpose transistors in digital applications ? Control of IC inputs |
| 描述与应用 |
特点 ?NPN/ PNP电阻配备晶体管; ?内置偏置电阻 ?减少了元件数量 ?减少取放成本 ?简化电路设计 应用 ?低电流外设驱动程序 ?通用晶体管数字应用的更换 ?控制IC投入 |
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