2SK23800S EBS 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
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最大栅源极电压Vgs(±)
Gate-Source Voltage |
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最大漏极电流Id
Drain Current |
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源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
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开启电压Vgs(th)
Gate-Source Threshold Voltage |
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耗散功率Pd
Power Dissipation |
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Description & Applications |
Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Features Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Low gate to source leakage current, IGSS Small capacitance of Ciss, Coss, Crss SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
描述与应用 |
硅N沟道结型场效应管 在低频率的阻抗变换 红外传感器 特性 硅N沟道结型场效应管 在低频率的阻抗变换 红外传感器 低栅极,源漏电流,IGSS 小电容Coss,Ciss,Crss SS-迷你型包装,使瘦身套和通过自动插入磁带/盒包装 |
技术文档PDF下载 |
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