2SK23800R EBR 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
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| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
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| 最大漏极电流Id
Drain Current |
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| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
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| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
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| 耗散功率Pd
Power Dissipation |
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| Description & Applications |
Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Features Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Low gate to source leakage current, IGSS Small capacitance of Ciss, Coss, Crss SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 |
特性 硅N沟道结型场效应管 在低频率的阻抗变换 红外传感器 低栅极，源漏电流，IGSS 小电容Coss，Ciss，Crss SS-迷你型包装，使瘦身套和通过自动插入磁带/盒包装 |
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