RN49A5 61 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-12V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-500mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.22 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80/140 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz/200MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ? Two devices are incorporated into an Ultra-Super-Mini (6-pin) package ? Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. ? Diverse resistance values are available suited to a range of different circuit designs. Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?东芝晶体管硅NPN外延型（PCT工艺）硅PNP外延式（PCT程序） ?两个设备都纳入一个超超级迷你（6针）封装 ?将偏置电阻晶体管，减少了器件数量。减少部件数量，使能制造的更加紧凑的设备，并降低装配成本。 ?多样化的电阻值是适合的范围内，不同的电路设计。 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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