RN49A4 AW 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V/40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/40V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
|
| Q2基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
120/300 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz/200MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) ? Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. ? Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?东芝晶体管的硅PNP NPN外延式（PCT程序）（偏置电阻内置晶体管） ?两个设备都纳入一个超超级迷你（6针）封装。 ?将偏置电阻晶体管，减少了部件数量。减少零件计数使能越来越紧凑的设备和制造，节省组装成本。 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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