RN1101FT XA 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
4.7KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
30 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
0.1W/100mW |
| Description & Applications |
Features ? Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ? High-density mount is possible because of devices housed in very thin TESM packages. ? Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ? Wide range of resistor values are available to use in various circuit designs. ? Complementary to RN2101FT |
| 描述与应用 |
特性 ?开关，逆变电路，接口电路和驱动器电路应用 ?高密度安装是可能因为设备安置非常薄TESM包。 ?将偏置电阻晶体管减少了部件数量。 减少零件计数使能越来越紧凑设备和制造节省组装成本。 ?电阻值范围广，可使用在各种电路设计。 ?对管是RN2101FT |
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