RN1101ACT CO 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
80mA |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
4.7KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
30 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.1W/100mW |
| Description & Applications |
Features ? Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ? Incorporating a bias resistor into a transistor reduces the number of parts, which enables the manufacture of ever more compact equipment and saves assembly cost. ? Complementary to RN2106ACT |
| 描述与应用 |
特性 ?开关，逆变电路，接口电路和驱动器电路应用 结合成晶体管的偏置电阻器，可以减少部件的数量，从而使制造的更加紧凑的设备，节省组装成本。 ?对管是RN2106ACT |
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