NTGS4111PT1G TG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-20V |
| 最大漏极电流Id
Drain Current |
-3.7A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
110m?@ VGS = -4.5V, ID = -2.7A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1~-3V |
| 耗散功率Pd
Power Dissipation |
1.25W |
| Description & Applications |
Power MOSFET Features ? Leading ?30 V Trench Process for Low RDS(on) ? Low Profile Package Suitable for Portable Applications ? Surface Mount TSOP?6 Package Saves Board Space ? Improved Efficiency for Battery Applications ? Pb?Free Package is Available Applications ? Battery Management and Switching ? Load Switching ? Battery Protection |
| 描述与应用 |
功率MOSFET 特点 ?领导-30 V沟道工艺的低RDS（ON） ?薄型封装，适合于便携式应用 ?表面贴装TSOP-6封装节省电路板空间 ?电池应用的效率的改进 ?无铅包装是可用 应用 ?电池管理和交换 ?负载开关 ?电池保护 |
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