MMBR911LT1 7P 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
60mA |
| 截止频率fT
Transtion Frequency(fT) |
6Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
30~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
333mW/0.333W |
| Description & Applications |
The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. |
| 描述与应用 |
RF线NPN硅 高频三极管 专为低噪声，宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料包装。这 摩托罗拉的小信号的塑料晶体管提供优异的质量和性能 成本低。 |
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