MMBR521LT1 7M 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
?20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-10V |
| 集电极连续输出电流IC
Collector Current(IC) |
-70mA |
| 截止频率fT
Transtion Frequency(fT) |
4.2GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
25~125 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
|
| 耗散功率Pc
PoWer Dissipation |
330mW/0.33W |
| Description & Applications |
PNP epitaxial planar transistor Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Low Noise High Power Guaranteed RF Parameters Surface Mounted SOT–23 Offer Improved RF Performance Lower Package Parasitics Higher Gain Available in tape and reel packaging options: |
| 描述与应用 |
PNP外延平面晶体管 设计主要用于高增益，低噪声小信号放大器高达3.5 GHz。也可用在应用中需要快速的切换时间。 高电流增益 低噪声 高功率 保证射频参数 表面贴装SOT-23 提供更好的RF性能 较低的封装寄生效应 高增益 可在磁带和卷轴包装选择： |
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