MMBR5031LT1 QY 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
20mA |
| 截止频率fT
Transtion Frequency(fT) |
1GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
25~300 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0 GHz. ? High Gain — Gpe = 17 dB Typ @ f = 450 MHz ? Low Noise — NF = 2.5 dB Typ @ f = 450 MHz ? Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 |
RF线NPN硅 高频三极管 专为使用表面贴装元件的厚薄膜电路 需要低噪声，高增益信号放大在频率1.0 千兆赫。 ?高增益 - GPE=17 dB（典型值）@ F =450兆赫 ?低噪声 - NF=2.5 dB（典型值）@ F =450兆赫 ?可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |
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