MCH5812 GN 的参数 |
| MOSFET 类型
Type |
N沟道 N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
2A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
165m?@ VGS =4V, ID =1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
15V |
| 平均整流电流Io
Average Rectified Current |
1A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.3V@IF=300mA |
| 耗散功率Pd
Power Dissipation |
800mW/0.8W |
| Description & Applications |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting Low ON-resistance Ultrahigh-speed switching 1.8V drive Short reverse recovery time Low forward voltage |
| 描述与应用 |
MOSFET N-沟道硅MOSFET SBD：肖特基二极管 通用开关设备应用 特点 N-沟道酸化镍硅MOSFET（MCH3445）和促进高密度安装在一个封装中所载的肖特基二极管（SS10015M）的复合型 低导通电阻 超高速开关 1.8V驱动器 反向恢复时间短 低正向电压 |
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