MCH5811 QM 的参数 |
MOSFET 类型
Type |
N沟道 N-Channel |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
最大漏极电流Id
Drain Current |
1.5A |
源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
210m?@ VGS =4V, ID =1A |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.4~1.3V |
DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
反向电压Vr
Reverse Voltage |
15V |
平均整流电流Io
Average Rectified Current |
1A |
最大正向压降VF
Forward Voltage(Vf) |
0.30V@IF=300mA |
耗散功率Pd
Power Dissipation |
800mW/0.8W |
Description & Applications |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a N-channel sillicon MOSFET (MCH3405) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. Low ON-resistance Ultrahigh-speed switching. Short reverse recovery time. Low forward voltage. |
描述与应用 |
MOSFET N-沟道硅MOSFET SBD:肖特基二极管 通用开关设备应用 特点 复合型的N-通道硅MOSFET(MCH3405)的肖特基二极管(SS10015M),包含在一个包装促进高密度安装的。 低导通电阻 超高速开关。 反向恢复时间短。 低正向电压。 |
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