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LL6263-GS08 的参数 |
| 反向电压Vr
Reverse Voltage |
40V |
| 平均整流电流Io
AVerage Rectified Current |
2A |
| 最大正向压降VF
Forward Voltage(Vf) |
1V |
| 最大耗散功率Pd
Power dissipation |
400MW/0.4W |
| Description & Applications |
? Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ? The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. ? Schottky Diodes |
| 描述与应用 |
?金属硅肖特基势垒装置是由一个PN结保护环保护。 ?低正向压降和快速开关使其成为理想的保护MOS装置，转向，偏置和耦合二极管快速开关，低逻辑电平应用。 ?肖特基二极管 |
| 技术文档PDF下载 |
在线阅读  |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| ELL6RH100M |
100 |
Panasonic |
05+ |
6M-100 |
0 |
电感Inductor/Coil/Choke-功率电感Power Inductor |
查看 |
| ELL6RH2R2M |
2R2 |
Panasonic |
05+ |
6M-2R2 |
2553 |
电感Inductor/Coil/Choke-功率电感Power Inductor |
查看 |
| BK1005LL680-T |
|
TAIYO |
06+NOPB |
0402-680 |
143900 |
磁珠Ferrite Bead-磁珠Ferrite Bead |
查看 |
| BK1608LL680-T |
|
TAIYO |
05+ |
0603-680 |
97000 |
磁珠Ferrite Bead-磁珠Ferrite Bead |
查看 |
| LL6263-GS08 |
|
VISHAY |
05NOPB |
SOD80/LL34 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
查看 |
| ELL6RH2R2M |
2r2 |
Panasonic |
05+ |
6M-2R2 |
1000 |
电感Inductor/Coil/Choke-功率电感Power Inductor |
查看 |
| LL6003Z-07 |
|
ZENER |
05+ |
1WR |
1600 |
二极管Diodes-其它Other |
查看 |
| BK1005LL680 |
|
TAIYO |
06+NOPB |
0402-680 |
0 |
磁珠Ferrite Bead |
查看 |
| ELL6RH100M |
100 |
Panasonic |
05+ |
6M-100 |
0 |
电感Inductor/Coil/Choke |
查看 |
| LL6263-GS08 |
|
VISHAY |
05+ROHS |
SOD80/LL34 |
17500 |
二极管Diodes |
查看 |
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