ISL9N315AD3ST N315AD 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
30A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.012Ω/Ohm @30A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-3V |
| 耗散功率Pd
Power Dissipation |
55A |
| Description & Applications |
N-Channel Logic Level PWM Optimized UltraFET ?Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83337 ? Fast switching |
| 描述与应用 |
N沟道逻辑电平PWM优化UltraFET ?沟道功率MOSFET 概述 该设备采用了新的先进的沟槽MOSFET 的技术和功能，同时保持低的导通电阻低栅极电荷。 为开关应用进行了优化，该设备提高DC/ DC转换器的整体效率，并允许 较高的开关频率的操作。以前发育类型83337 快速切换 |
| 技术文档PDF下载 |
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