ISL9N306AD3ST N306AD 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
5A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.0052Ω/Ohm @250A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-3V |
| 耗散功率Pd
Power Dissipation |
125W |
| Description & Applications |
N-Channel Logic Level PWM Optimized UltraFET? Trench Power MOSFETs 30V, 50A, 6m? General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. ? Fast switching |
| 描述与应用 |
N沟道逻辑电平PWM优化UltraFET?沟槽功率MOSFET 30V，50A，6MΩ 概述 该设备采用了新的先进的沟槽MOSFET 的技术和功能，同时保持低的导通电阻低栅极电荷。 为开关应用进行了优化，该设备提高 DC/ DC转换器的整体效率，并允许以较高的开关频率的操作。 快速切换 |
| 技术文档PDF下载 |
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