IRLML6302 CA/CB/CC/C1/1C/CE/CF/CG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
|
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
-780mA/-0.78A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.60Ω @-600mA,-4.5V |
| 开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.70V |
| 耗散功率Pd
Power Dissipation |
540mW/0.54W |
| Description & Applications |
Ultra Low On-Resistance P-Channel MOSFET Surface Mount lAvailable in Tape & Reel Low Gate Charge |
| 描述与应用 |
超低导通电阻 P沟道MOSFET 表面贴装 在磁带和卷轴lAvailable 低栅极电荷 |
| 技术文档PDF下载 |
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