GA1A4P L34 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
0.212765957 |
直流电流增益hFE
DC Current Gain(hFE) |
85-370 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
0.15W/150mW |
Description & Applications |
Features Medium speed switching resistor built-in TYPE NPN transistor Resistors built-in TYPE Comlementary to GN1A4P |
描述与应用 |
特性 中速开关电阻内置型NPN晶体管 电阻器内置型 对管是 GN1A4P |
技术文档PDF下载 |
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