GA1A4M L33 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
35-230 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
0.15W/150mW |
Description & Applications |
FEATURES ? Resistors Built-in TYPE ? Complementary to GN1A4M |
描述与应用 |
特性 ?内置电阻型 ?对管是GN1A4M |
技术文档PDF下载 |
在线阅读 ![](images/pdf.jpg) |