FP201 201 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
300mA |
| 截止频率fT
Transtion Frequency(fT) |
2200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
60~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV |
| 耗散功率Pc
Power Dissipation |
1000mW |
| Description & Applications |
Features ? NPN Epitaxial Planar Silicon Composite Transistors ? High-Frequency Amp,Differential Amp Applications ? Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. ? The FP201 is formed with two chips, being equivalent to the 2SC4504, placed in one package. ? Excellent in thermal equilibrium and pair capability. |
| 描述与应用 |
特点 ?NPN平面外延硅复合晶体管 ?高频放大器，差分放大器应用 ?复合型中包含2个晶体管 ?PCP包目前在使用，大大提高了安装效率。 ?FP201是两个芯片组成，相当于2SC4504，放置在一个包装。 ?优秀的热平衡和对能力。 |
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