FDC653N 653 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
5A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.035Ω/Ohm @5999mA,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-2V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V. RDS(ON) = 0.035 W @ VGS= 10 V RDS(ON)= 0.055 W @ VGS= 4.5 V. Proprietary SuperSOTTM -6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) .Exceptional on-resistance and maximum DC current capability. |
| 描述与应用 |
N沟道增强型场效应晶体管 ?低栅极电荷 ?开关速度快 ?高性能沟道技术极 低RDS（ON） ?高功率和电流处理能力 |
| 技术文档PDF下载 |
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