2SJ130 J130 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-300V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-1A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
6.0Ω -500mA,-10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-2.0--4.0V |
| 耗散功率Pd
Power Dissipation |
20W |
| Description & Applications |
Silicon P-Channel MOS FET High speed power switching applications Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators |
| 描述与应用 |
硅P沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 无二次击穿 适用于开关稳压器，DC-DC转换器的和超声功率振荡器 |
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