2SD1030-R 1ZR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
400~800 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
50mV |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon NPN epitaxial planer type low-frequency amplification Features * High foward current transfer ratio hFE. * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VEBO. * Low noise voltage NV. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 |
NPN硅外延平面型 ?低频放大 ?特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE（SAT） *高发射器基极电压VEBO。 *低噪声电压NV。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 包装。 |
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