2SC5754 R57 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
13V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
5V |
集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
截止频率fT
Transtion Frequency(fT) |
20GHz |
直流电流增益hFE
DC Current Gain(hFE) |
400~1000 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
735mW/0.735W |
Description & Applications |
NPN SILICON RF TRANSISTOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ? Ideal for 460 MHz to 2.4 GHz medium output power amplification ? PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm ? High collector efficiency: ηC = 60% ? UHS0-HV technology (fT = 25 GHz) adopted ? High reliability through use of gold electrodes ? Flat-lead 4-pin thin-type super minimold (M04) package |
描述与应用 |
NPN硅RF晶体管 中等输出功率放大(0.4 W) 扁平引线超薄型4引脚超级迷你(M04) 特点 ?非常适合460 MHz到2.4 GHz的中等输出功率放大 PO(1分贝)=26.0 dBm。 @ VCE= 3.6 V,F =1.8 GHz时,引脚= 15 dBm的 集热效率高:ηC=60% ?UHS0-HV技术(FT =25千兆赫)通过 ?高可靠性,通过使用金电极 ?4-pin薄型扁平引线型超级迷你(M04)包 |
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