2SC5667 UB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
3.3V |
| 集电极连续输出电流IC
Collector Current(IC) |
35mA |
| 截止频率fT
Transtion Frequency(fT) |
21GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
115mW/0.115W |
| Description & Applications |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ??? HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES ? Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA ? Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA ? High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA ? fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted ? 3-pin ultra super minimold (t = 0.75 mm) |
| 描述与应用 |
NPN硅RF晶体管 低噪声???高增益放大 3-PIN超超迷你 特点 ?低噪音非常适于?高增益放大和振荡3 GHz或以上 NF=1.1 dB，GA= 11分贝@ F =2 GHz时，VCE= 2 V，IC=5毫安 ?最大可用功率增益：MAG。 =12.5 dB典型值。 @ F =2 GHz时，VCE= 2 V，IC=20毫安 ?高FT：FT =21 GHz的TYP。 @ F =2 GHz时，VCE= 2 V，IC=20毫安 ?英尺= 25 GHz的的“UHS0”（超高速处理）技术通过 ?3引脚超超级迷你（T =0.75毫米） |
| 技术文档PDF下载 |
在线阅读  |
