2SC5338-T1 SF 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
6Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
80~160 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES ? High gain |S21 |*2 = 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f = 1 GHz ? Low distortion and low voltage IM2 = ?55 dB TYP., IM3 = ?76 dB TYP. @VCE = 5 V, Ic = 50 mA, Vin = 105 dB μV/75 ? ? New power mini-mold package version of a 4-pin type gain-improved on the 2SC4703 |
| 描述与应用 |
NPN外延硅晶体管 高频低失真放大器 说明 2SC5338是专为低失真和低噪声射频放大器与低电源上的操作 电压（VCE= 5 V）。这种低的失真特性，适用于CATV，远程通信，例如。 特点 ?高增益| S21| *2 ?=10 dB，@ VCE= 5 V，IC =50 mA时，F =1 GHz的 ?低失真和低电压 IM2= -55 dB，IM3=-76 dB典型值。 @ VCE= 5 V，IC =50 mA时，VIN =105分贝μV/75Ω ?新的电源小型模具包版本的4引脚型 增益改善2SC4703 |
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