DMN5L06DWK-7 DABZ4 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
305MA |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
VGS = 5.0V, ID = 50mA 2Ω |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.2v |
| 耗散功率Pd
Power Dissipation |
200mw |
| Description & Applications |
ual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV"Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 |
双N沟道MOSFET的低导通电阻极低的栅极阈值电压低输入电容开关速度快低输入/输出泄漏超小型表面贴装封装铅的设计免费/ RoHS规定（注2）ESD保护可达2kV的“绿色”设备（注4）符合AEC-Q101标准的高可靠性 |
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