CFB0303-0000 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
|
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
|
| 漏极电流(Vgs=0V)IDSS
Drain Current |
|
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
|
| 耗散功率Pd
Power Dissipation |
|
| Description & Applications |
High Dynamic Range Low Noise GaAs FET
Features
Low-Noise Figure from 0.8 to 2.0 GHz
High Gain
High Intercept Point
Highly Stable
Easily Matched to 50
70 mil Package
PHEMT Material
Applications
Cellular Base Stations
PCS Base Stations
Industrial Data Networks |
| 描述与应用 |
高动态范围，低噪声的GaAs FET
产品特点
低噪声系数从0.8到2.0 GHz的
高增益
高截取点
高度稳定
很容易匹配到50
70万包
PHEMT材料
应用
蜂窝基站
PCS基站
工业数据网络 |
| 技术文档PDF下载 |
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