CFB0301-000T 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
|
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
|
| 漏极电流(Vgs=0V)IDSS
Drain Current |
|
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
|
| 耗散功率Pd
Power Dissipation |
|
| Description & Applications |
High Dynamic Range Low-Noise GaAs FET
Features
❏ Low-Noise Figure from 0.8 to 2.0 GHz
❏ High Gain
❏ High Intercept Point
❏ Highly Stable
❏ Easily Matched to 50Ω
❏ 70 mil Package
Applications
❏ Cellular Base Stations
❏ PCS Base Stations
❏ Industrial Data Networks |
| 描述与应用 |
高动态范围低噪声的GaAs FET
产品特点
❏低噪声系数从0.8到2.0 GHz的
❏高增益
❏高截取点
❏高度稳定
❏轻松匹配50Ω
❏70万包
应用
❏蜂窝基站
❏PCS基站
❏工业数据网络 |
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